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RF Micropower
RF Micropower is a fabless semiconductor company based in Phoenix, Arizona that sells and licenses the RFuP〔(【引用サイトリンク】url=http://rfmicropower.com/Fabrication-Technologies.htm )〕 technology that was initially developed by SJT Micropower, Inc. The company's proprietary technology enables high voltage Si-MESFET transistors to be fabricated on commercial SOI CMOS processes without altering the native process or adding additional fabrication steps〔J. Ervin, et. al, "CMOS-Compatible SOI MESFETs With High Breakdown Voltage," IEEE Trans. Electron Devices, vol. 53, pp. 3129-3135, 2006〕 which allows high levels of monolithic integration. These power transistors can operate at voltages that are 20 times higher than the baseline CMOS transistors〔W. Lepkowski, et. al, “High Voltage SOI MESFETs at the 45nm Technology Node”, presented at IEEE Int. SOI Conf., 2012〕 and at several Watts of power. The technology has been implemented in various integrated circuit solutions including RF power amplifiers and power regulation circuits. According to their website,〔(【引用サイトリンク】url=http://rfmicropower.com/Fabrication-Technologies.htm )〕 they have demonstrated Si-MESFETs at the 350 nm, 250 nm, 150 nm, 45 nm and 32 nm process nodes. The smallest process node for MESFETs on any type of substrate is currently 32 nm.〔W. Lepkowski, et al, “40V MESFETs Fabricated on 32nm SOI CMOS”, IEEE Int. CICC Conf., 2013.〕
==Acceptance of Si-MESFETs==
Applications of RF Micropower’s Si-MESFET (metal-semiconductor field-effect-transistor) technology in linear and switching regulators for radiation environments has been reported by the NASA Goddard Space Flight Center and was featured in the September 2011 and February 2013 Issues of NASA Tech Briefs. In Chapter 6 of the book Extreme Environment Electronics (edited by John D. Cressler and H. Alan Mantooth), Johnathan A. Pellish from NASA and Lewis M. Cohn from the Naval Research Laboratory state that MESFETs on SOI substrates are suitable for applications from -180°C and 250°C and have been demonstrated to operate through 5 Mrad of total ionizing dose. The Si-MESFETs and their corresponding applications were also featured prominently in Chapters 23 and 63 of the book. Most recently, results from the 45 nm process node were published in the book Frontiers in Electronics (edited by Sorin Cristoloveanu and Michael S. Shur).
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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